Showing 1 - 20 results of 59 for search 'Mikhailov, Nikolay N.', query time: 0.06s Refine Results
  1. 1
    Electrical properties of the V-defects of epitaxial HgCdTe
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  2. 2
    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  3. 3
    Admittance of barrier structures based on mercury cadmium telluride
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  4. 4
    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  5. 5
    Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
    Published in Applied nanoscience
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  6. 6
    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  7. 7
    Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  8. 8
    Admittance investigation of MIS structures with GgTe-based single quantum wells
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  9. 9
    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  10. 10
    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  11. 11
    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  12. 12
    Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  13. 13
    Ion implantation and ion milling in MBE Hg1-xCdxNe films
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  14. 14
    Electrical properties of the V-defects of epitaxial HgCdTe
    Other Authors: “...Mikhailov, Nikolay N....”
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    Book Chapter
  15. 15
    Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra
    Published in Physica scripta
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  16. 16
    Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  17. 17
    Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
    Published in Vacuum
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  18. 18
    Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  19. 19
    Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy
    Published in Optical engineering
    Other Authors: “...Mikhailov, Nikolay N....”
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    Article
  20. 20
    Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Mikhailov, Nikolay N....”
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    Book Chapter
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