Showing 1 - 20 results of 48 for search 'Yakushev, Maxim V.', query time: 0.04s Refine Results
  1. 1
    Electrical properties of the V-defects of epitaxial HgCdTe
    Other Authors: “...Yakushev, Maxim V....”
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    Book Chapter
  2. 2
    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors
    Other Authors: “...Yakushev, Maxim V....”
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  3. 3
    Admittance of barrier structures based on mercury cadmium telluride
    Other Authors: “...Yakushev, Maxim V....”
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    Article
  4. 4
    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Yakushev, Maxim V....”
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  5. 5
    Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3-5 μm spectral range
    Other Authors: “...Yakushev, Maxim V....”
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  6. 6
    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe
    Other Authors: “...Yakushev, Maxim V....”
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    Article
  7. 7
    Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra
    Published in Physica scripta
    Other Authors: “...Yakushev, Maxim V....”
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  8. 8
    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
    Other Authors: “...Yakushev, Maxim V....”
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    Article
  9. 9
    Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
    Other Authors: “...Yakushev, Maxim V....”
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  10. 10
    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Yakushev, Maxim V....”
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  11. 11
    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
    Other Authors: “...Yakushev, Maxim V....”
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  12. 12
    Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors
    Other Authors: “...Yakushev, Maxim V....”
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    Article
  13. 13
    Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
    Published in Vacuum
    Other Authors: “...Yakushev, Maxim V....”
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  14. 14
    Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
    Other Authors: “...Yakushev, Maxim V....”
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  15. 15
    Admittance of barrier nanostructures based on MBE HgCdTe
    Published in Applied nanoscience
    Other Authors: “...Yakushev, Maxim V....”
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  16. 16
    Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
    Other Authors: “...Yakushev, Maxim V....”
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    Book Chapter
  17. 17
    Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal-insulator-semiconductor techniques
    Other Authors: “...Yakushev, Maxim V....”
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  18. 18
    The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
    Other Authors: “...Yakushev, Maxim V....”
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  19. 19
    Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
    Other Authors: “...Yakushev, Maxim V....”
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  20. 20
    Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques
    Other Authors: “...Yakushev, Maxim V....”
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