Equilibrium concentration of kinks on the SB steps of the Si(100) surface

The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are established. The numbers of step kinks are determined from atomic-resolution scanning tunneling micr...

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Bibliographic Details
Published in:Journal of surface investigation: X-ray, synchrotron and neutron techniques Vol. 16, № 1. P. 140-144
Main Author: Yesin, Michail Yu
Other Authors: Teys, Sergey A., Nikiforov, Alexander I.
Format: Article
Language:English
Subjects:
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001002743
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245 1 0 |a Equilibrium concentration of kinks on the SB steps of the Si(100) surface  |c M. Yu. Yesin, S. A. Teys, A. I. Nikiforov 
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520 3 |a The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are established. The numbers of step kinks are determined from atomic-resolution scanning tunneling microscopy images of the stepped Si(100) surface. It is shown that the temperature dependence of the number of kinks has a minimum at 650 degrees C. It is suggested that, at low temperatures, the steps are intensively smoothed (step kinks vanish), while at high temperatures, the step-destruction process (formation of a great number of step kinks) is more intensive. The step smoothing and destruction processes include a sequence of atom and dimer elementary acts. As the annealing time increases, the kink concentration decreases and takes a constant value. The equilibrium step-kink concentration is shown to be determined by the surface annealing temperature and time. 
653 |a сканирующая туннельная микроскопия 
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700 1 |a Teys, Sergey A.  |9 897143 
700 1 |a Nikiforov, Alexander I.  |9 95710 
773 0 |t Journal of surface investigation: X-ray, synchrotron and neutron techniques  |d 2022  |g Vol. 16, № 1. P. 140-144  |x 1027-4510 
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