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|a 10.1134/S1027451022010220
|2 doi
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|a Yesin, Michail Yu.
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|a Equilibrium concentration of kinks on the SB steps of the Si(100) surface
|c M. Yu. Yesin, S. A. Teys, A. I. Nikiforov
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|a Текст
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|a электронный
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|a Библиогр.: 23 назв.
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|a The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are established. The numbers of step kinks are determined from atomic-resolution scanning tunneling microscopy images of the stepped Si(100) surface. It is shown that the temperature dependence of the number of kinks has a minimum at 650 degrees C. It is suggested that, at low temperatures, the steps are intensively smoothed (step kinks vanish), while at high temperatures, the step-destruction process (formation of a great number of step kinks) is more intensive. The step smoothing and destruction processes include a sequence of atom and dimer elementary acts. As the annealing time increases, the kink concentration decreases and takes a constant value. The equilibrium step-kink concentration is shown to be determined by the surface annealing temperature and time.
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|a сканирующая туннельная микроскопия
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|a температурная зависимость
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|a ступенчатые изломы
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|a статьи в журналах
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|a Teys, Sergey A.
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|a Nikiforov, Alexander I.
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|t Journal of surface investigation: X-ray, synchrotron and neutron techniques
|d 2022
|g Vol. 16, № 1. P. 140-144
|x 1027-4510
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001002743
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