Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R (SH) , R (SK) , rho and geometrical parameter L (T) on the LTLM test line width W-k . The paper explores the geometry of relief (topography) irregularit...
| Опубликовано в: : | Semiconductor science and technology Vol. 37, № 5. P. 055023 |
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| Другие авторы: | , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001003553 |