Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface
Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the differ...
| Published in: | Physical Review B Vol. 107, № 4. P. 045402-1-045402-9 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009338 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1103/PhysRevB.107.045402 |2 doi | |
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| 245 | 1 | 0 | |a Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface |c N. L. Zaitsev, I. P. Rusinov, T. V. Menshchikova, E. V. Chulkov |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 76 назв. | ||
| 520 | 3 | |a Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices. | |
| 653 | |a обменно-расщепленные состояния | ||
| 653 | |a поверхностные состояния | ||
| 653 | |a Рашбы эффект | ||
| 653 | |a антиферромагнитные топологические изоляторы | ||
| 655 | 4 | |a статьи в журналах |9 898731 | |
| 700 | 1 | |a Zaitsev, Nickolai L. |9 364889 | |
| 700 | 1 | |a Rusinov, Igor P. |9 220490 | |
| 700 | 1 | |a Menshchikova, Tatiana V. |9 89118 | |
| 700 | 1 | |a Chulkov, Evgueni V. |9 89119 | |
| 773 | 0 | |t Physical Review B |d 2023 |g Vol. 107, № 4. P. 045402-1-045402-9 |x 2469-9950 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009338 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1009338 | ||
| 908 | |a статья | ||
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