|
|
|
|
| LEADER |
03323nam a2200445Ki 4500 |
| 001 |
koha001010721 |
| 003 |
OCoLC |
| 005 |
20231122155759.0 |
| 006 |
m d |
| 007 |
cr cnu---unuuu |
| 008 |
181220s2018 enka ob 000 0 eng d |
| 035 |
|
|
|a koha001010721
|
| 040 |
|
|
|a N$T
|b eng
|e rda
|e pn
|c N$T
|
| 020 |
|
|
|a 9781527523425
|q (electronic bk.)
|
| 020 |
|
|
|a 152752342X
|q (electronic bk.)
|
| 020 |
|
|
|z 1527506355
|
| 020 |
|
|
|z 9781527506350
|
| 050 |
|
4 |
|a QC611.6.D4
|b T35 2018eb
|
| 072 |
|
7 |
|a TEC
|x 009070
|2 bisacsh
|
| 082 |
0 |
4 |
|a 621.3815/2
|2 23
|
| 049 |
|
|
|a MAIN
|
| 100 |
1 |
|
|a Talanin, V. I.
|q (Vitaliĭ Igorʹevich),
|
| 245 |
1 |
4 |
|a The formation of structural imperfections in semiconductor silicon
|c by V. I. Talanin and I. E. Talanin.
|
| 264 |
|
1 |
|a Newcastle upon Tyne, UK
|b Cambridge Scholars Publishing,
|c 2018.
|
| 300 |
|
|
|a 1 online resource (xii, 269 pages)
|b illustrations.
|
| 520 |
|
|
|a "Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students."--
|c Back cover.
|
| 504 |
|
|
|a Includes bibliographical references (pages 239-267).
|
| 505 |
0 |
|
|a Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation -- Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon -- Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation -- Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals -- Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing -- Chapter six. General approach to the engineering of defects in semiconductor silicon.
|
| 588 |
0 |
|
|a Print version record.
|
| 653 |
|
0 |
|a Silicon
|x Structure.
|
| 653 |
|
0 |
|a Semiconductors
|x Impurity distribution.
|
| 653 |
|
0 |
|a Semiconductors
|x Materials.
|
| 653 |
|
7 |
|a Semiconductors
|x Impurity distribution.
|2 fast
|0 (OCoLC)fst01112226
|
| 653 |
|
7 |
|a Semiconductors
|x Materials.
|2 fast
|0 (OCoLC)fst01112237
|
| 653 |
|
7 |
|a TECHNOLOGY & ENGINEERING / Mechanical
|2 bisacsh
|
| 655 |
|
4 |
|a EBSCO eBooks
|
| 700 |
1 |
|
|a Talanin, I. E.
|q (Igor Evgenievich),
|
| 776 |
0 |
8 |
|i Print version:
|a Talanin, V. I. (Vitaliĭ Igorʹevich).
|t Formation of structural imperfections in semiconductor silicon.
|d Newcastle upon Tyne, UK : Cambridge Scholars Publishing, 2018
|z 1527506355
|w (OCoLC)1019739852
|
| 856 |
4 |
0 |
|u https://www.lib.tsu.ru/mminfo/2023/EBSCO/1986604.pdf
|
| 999 |
|
|
|c 1010721
|d 1010721
|
