The formation of structural imperfections in semiconductor silicon
"Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor s...
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| Format: | eBook |
| Language: | English |
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Newcastle upon Tyne, UK
Cambridge Scholars Publishing,
2018.
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| Online Access: | https://www.lib.tsu.ru/mminfo/2023/EBSCO/1986604.pdf |
Table of Contents:
- Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation
- Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon
- Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation
- Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals
- Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing
- Chapter six. General approach to the engineering of defects in semiconductor silicon.