MATERIALS RESEARCH FOUNDATIONS radiation effects in silicon carbide.
The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for app...
| Main Author: | |
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| Format: | eBook |
| Language: | English |
| Published: |
[Place of publication not identified]
MATERIALS RESEARCH FORUM,
2017.
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| Series: | Materials Research Foundations ;
volume 6 (2017) |
| Subjects: | |
| Online Access: | EBSCOhost Перейти в каталог НБ ТГУ |
| LEADER | 03185cam a2200433Mi 4500 | ||
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| 100 | 1 | |a Lebedev, A. A. |9 987432 | |
| 245 | 1 | 0 | |a MATERIALS RESEARCH FOUNDATIONS |h [electronic resource] |b radiation effects in silicon carbide. |
| 260 | |a [Place of publication not identified] |b MATERIALS RESEARCH FORUM, |c 2017. |9 906035 | ||
| 300 | |a 1 online resource | ||
| 490 | 0 | |a Materials Research Foundations ; |v volume 6 (2017) | |
| 505 | 8 | |a 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 Neutrons. | |
| 505 | 8 | |a 3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbide. | |
| 505 | 8 | |a 4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editors. | |
| 520 | |a The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed. | ||
| 653 | 0 | |a Silicon carbide |x Effect of radiation on. | |
| 653 | 4 | |a Materials science |x Data processing. | |
| 653 | 7 | |a SCIENCE / Chemistry / Inorganic |2 bisacsh | |
| 655 | 0 | |a EBSCO eBooks |9 905790 | |
| 655 | 4 | |a Electronic books. |9 899821 | |
| 856 | 4 | 0 | |3 EBSCOhost |u https://www.lib.tsu.ru/limit/2023/EBSCO/1426558.pdf |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1011025 | ||
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