MATERIALS RESEARCH FOUNDATIONS radiation effects in silicon carbide.
The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for app...
| Main Author: | |
|---|---|
| Format: | eBook |
| Language: | English |
| Published: |
[Place of publication not identified]
MATERIALS RESEARCH FORUM,
2017.
|
| Series: | Materials Research Foundations ;
volume 6 (2017) |
| Subjects: | |
| Online Access: | EBSCOhost Перейти в каталог НБ ТГУ |