Electrical relaxation and transport properties of ZnGeP2 and 4H-SiC crystals measured with terahertz spectroscopy
Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from bo...
| Опубликовано в: : | Photonics Vol. 10, № 7. P. 827 (1-16) |
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| Другие авторы: | Voevodin, Vladimir I., Brudnyi, Valentin N., Sarkisov, Yuri S., Su, Xinyang, Sarkisov, Sergey Yu |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001017455 |
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Физические процессы в газовых лазерах: научное издание/
по: Елецкий, А. В. Александр Валентинович, et al.
Публикация: (1985) - Адаптация теории интерферометра Фабри-Перо для обработки данных терагерцовой спектроскопии ZnGeP2
