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|a 10.3390/chemosensors11060325
|2 doi
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|a koha001132767
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a High sensitivity low-temperature hydrogen sensors based on SnO2/κ(ε)-Ga2O3:Sn heterostructure
|c A. V. Almaev, N. N. Yakovlev, V. V. Kopyev [et al.]
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|a Текст
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|a электронный
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|a Библиогр.: 59 назв.
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|a The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H2 exposure exceeded the corresponding values of single κ(ε)-Ga2O3:Sn and SnO2 films within the temperature range of 25–175 °C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/κ(ε)-Ga2O3:Sn structure to 104 ppm of H2 and 100 ppm of NO2 were 30–47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 °C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on κ(ε)-Ga2O3:Sn. The SnO2/κ(ε)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.
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|a магнетронное распыление
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|a гетероструктуры
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|a газовые сенсоры
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|a статьи в журналах
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|a Almaev, Aleksei V.
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1 |
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|a Yakovlev, Nikita N.
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1 |
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|a Kopyev, Viktor V.
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1 |
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|a Nikolaev, Vladimir I.
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1 |
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|a Butenko, Pavel N.
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|a Deng, Jinxiang
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|a Pechnikov, Aleksei I.
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|a Korusenko, Petr M.
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|a Koroleva, Aleksandra
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|a Zhizhin, Evgeniy V.
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|t Chemosensors
|d 2023
|g Vol. 11, № 6. P. 325 (1-15)
|x 2227-9040
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4 |
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|a RU-ToGU
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132767
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|a статья
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|c 1132767
|d 1132767
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