Effect of n- and p-doping on vacancy formation in cationic and anionic sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs heterostructures
The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostruct...
| Опубликовано в: : | Nanomaterials Vol. 13, № 14. P. 2136 (1-17) |
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| Формат: | Статья в журнале |
| Язык: | English |
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| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132774 |