Structural properties and energy spectrum of novel GaSb/AlP self-assembled quantum dots
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were...
| Published in: | Nanomaterials Vol. 13, № 5. P. 910 (1-20) |
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| Other Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001133162 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.3390/nano13050910 |2 doi | |
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| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Structural properties and energy spectrum of novel GaSb/AlP self-assembled quantum dots |c D. S. Abramkin, M. O. Petrushkov, D. B. Bogomolov [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 74 назв. | ||
| 520 | 3 | |a In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells. | |
| 653 | |a квантовые точки | ||
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 653 | |a структурные свойства | ||
| 653 | |a энергетические спектры | ||
| 655 | 4 | |a статьи в журналах |9 957401 | |
| 700 | 1 | |a Abramkin, Demid S. |9 878565 | |
| 700 | 1 | |a Petrushkov, Mikhail O. |9 897920 | |
| 700 | 1 | |a Bogomolov, Dmitrii B. |9 957402 | |
| 700 | 1 | |a Emelyanov, Eugeny A. |9 897922 | |
| 700 | 1 | |a Yesin, Michail Yu. |9 496654 | |
| 700 | 1 | |a Vasev, Andrey V. |9 897926 | |
| 700 | 1 | |a Bloshkin, Aleksei A. |9 106764 | |
| 700 | 1 | |a Koptev, Eugeny S. |9 957403 | |
| 700 | 1 | |a Putyato, Mikhail A. |9 897923 | |
| 700 | 1 | |a Atuchin, Victor V. |9 95830 | |
| 700 | 1 | |a Preobrazhenskii, Valery V. |9 475087 | |
| 773 | 0 | |t Nanomaterials |d 2023 |g Vol. 13, № 5. P. 910 (1-20) |x 2079-4991 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001133162 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1133162 | ||
| 908 | |a статья | ||
| 039 | |b 100 | ||
| 999 | |c 1133162 |d 1133162 | ||