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20240527165854.0 |
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240520|2023 enk s a eng d |
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|a 10.1016/j.ssc.2023.115111
|2 doi
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|a koha001139655
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a The physical mechanism underpinning superfast switching of GaAs S-diode
|c S. N. Vainshtein, I. A. Prudaev, G. Duan, T. Rahkonen
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|a Текст
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|a электронный
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|a Библиогр.: 39 назв.
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|a Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-h) plasma. Each domain surrounded by the plasma shrinks down to a nanometre scale in width, followed by collapse. Those domains cause different peculiar transient features from superfast (picosecond range) high-current avalanche switching in the voltage-blocking layers to sub-THz pulsed electromagnetic emission, filaments with extreme (∼10 MA/cm2) current density, hot-photon radiation, etc. The physics of those moving domains differs drastically from the Gunn effect having in common only a requirement of negative differential mobility (NDM) of the electrons and the fact that both phenomena have so far been observed in n-type GaAs layers. Here we demonstrate the CFD phenomenon in a p-layer formed by a deep acceptor. This finding contributes to the interpretation of superfast switching in so-called S-diodes. Besides proving the CFD nature underpinning superfast switching, we show the unique parameters of a simple, S-diode-based optical transmitter that achieves high-power (∼160 W) sub-nanosecond output. This performance is relevant to automotive and flight guidance applications of lidar. A brief review of alternative solutions presenting previous state-of-the-art for miniature lidar transmitters is given for comparison.
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| 653 |
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|a полупроводники
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| 653 |
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|a физика сверхбыстрого лавинного переключения
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| 653 |
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|a Ганна эффект
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| 655 |
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|a статьи в журналах
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|a Vainshtein, Sergey N.
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1 |
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|a Prudaev, Ilya A.
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|a Duan, Guoyong
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|a Rahkonen, Timo
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| 773 |
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|t Solid state communications
|d 2023
|g Vol. 365. P. 115111 (1-8)
|x 0038-1098
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| 852 |
4 |
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|a RU-ToGU
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| 856 |
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655
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|a статья
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|c 1139655
|d 1139655
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