The physical mechanism underpinning superfast switching of GaAs S-diode
Recently a physical phenomenon termed "collapsing field domains" (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electro...
| Published in: | Solid state communications Vol. 365. P. 115111 (1-8) |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655 Перейти в каталог НБ ТГУ |
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| 245 | 1 | 4 | |a The physical mechanism underpinning superfast switching of GaAs S-diode |c S. N. Vainshtein, I. A. Prudaev, G. Duan, T. Rahkonen |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 39 назв. | ||
| 520 | 3 | |a Recently a physical phenomenon termed "collapsing field domains" (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-h) plasma. Each domain surrounded by the plasma shrinks down to a nanometre scale in width, followed by collapse. Those domains cause different peculiar transient features from superfast (picosecond range) high-current avalanche switching in the voltage-blocking layers to sub-THz pulsed electromagnetic emission, filaments with extreme (∼10 MA/cm2) current density, hot-photon radiation, etc. The physics of those moving domains differs drastically from the Gunn effect having in common only a requirement of negative differential mobility (NDM) of the electrons and the fact that both phenomena have so far been observed in n-type GaAs layers. Here we demonstrate the CFD phenomenon in a p-layer formed by a deep acceptor. This finding contributes to the interpretation of superfast switching in so-called S-diodes. Besides proving the CFD nature underpinning superfast switching, we show the unique parameters of a simple, S-diode-based optical transmitter that achieves high-power (∼160 W) sub-nanosecond output. This performance is relevant to automotive and flight guidance applications of lidar. A brief review of alternative solutions presenting previous state-of-the-art for miniature lidar transmitters is given for comparison. | |
| 653 | |a полупроводники | ||
| 653 | |a физика сверхбыстрого лавинного переключения | ||
| 653 | |a Ганна эффект | ||
| 655 | 4 | |a статьи в журналах |9 962112 | |
| 700 | 1 | |a Vainshtein, Sergey N. |9 806543 | |
| 700 | 1 | |a Prudaev, Ilya A. |9 99979 | |
| 700 | 1 | |a Duan, Guoyong |9 962113 | |
| 700 | 1 | |a Rahkonen, Timo |9 962114 | |
| 773 | 0 | |t Solid state communications |d 2023 |g Vol. 365. P. 115111 (1-8) |x 0038-1098 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655 | |
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