The physical mechanism underpinning superfast switching of GaAs S-diode

Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-...

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Bibliographic Details
Published in:Solid state communications Vol. 365. P. 115111 (1-8)
Other Authors: Vainshtein, Sergey N., Prudaev, Ilya A., Duan, Guoyong, Rahkonen, Timo
Format: Article
Language:English
Subjects:
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655
LEADER 02711nab a2200325 c 4500
001 koha001139655
005 20240527165854.0
007 cr |
008 240520|2023 enk s a eng d
024 7 |a 10.1016/j.ssc.2023.115111  |2 doi 
035 |a koha001139655 
040 |a RU-ToGU  |b rus  |c RU-ToGU 
245 1 4 |a The physical mechanism underpinning superfast switching of GaAs S-diode  |c S. N. Vainshtein, I. A. Prudaev, G. Duan, T. Rahkonen 
336 |a Текст 
337 |a электронный 
504 |a Библиогр.: 39 назв. 
520 3 |a Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-h) plasma. Each domain surrounded by the plasma shrinks down to a nanometre scale in width, followed by collapse. Those domains cause different peculiar transient features from superfast (picosecond range) high-current avalanche switching in the voltage-blocking layers to sub-THz pulsed electromagnetic emission, filaments with extreme (∼10 MA/cm2) current density, hot-photon radiation, etc. The physics of those moving domains differs drastically from the Gunn effect having in common only a requirement of negative differential mobility (NDM) of the electrons and the fact that both phenomena have so far been observed in n-type GaAs layers. Here we demonstrate the CFD phenomenon in a p-layer formed by a deep acceptor. This finding contributes to the interpretation of superfast switching in so-called S-diodes. Besides proving the CFD nature underpinning superfast switching, we show the unique parameters of a simple, S-diode-based optical transmitter that achieves high-power (∼160 W) sub-nanosecond output. This performance is relevant to automotive and flight guidance applications of lidar. A brief review of alternative solutions presenting previous state-of-the-art for miniature lidar transmitters is given for comparison. 
653 |a полупроводники 
653 |a физика сверхбыстрого лавинного переключения 
653 |a Ганна эффект 
655 4 |a статьи в журналах 
700 1 |a Vainshtein, Sergey N. 
700 1 |a Prudaev, Ilya A. 
700 1 |a Duan, Guoyong 
700 1 |a Rahkonen, Timo 
773 0 |t Solid state communications  |d 2023  |g Vol. 365. P. 115111 (1-8)  |x 0038-1098 
852 4 |a RU-ToGU 
856 4 |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655 
908 |a статья 
999 |c 1139655  |d 1139655