The physical mechanism underpinning superfast switching of GaAs S-diode
Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-...
| Опубликовано в: : | Solid state communications Vol. 365. P. 115111 (1-8) |
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| Другие авторы: | , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139655 |