Research of the gain of silicon photomultipliers in a temperature chamber at various voltages
The results of the research of the gain for a series of silicon photomultipliers are presented. A model for research the characteristics of photodetectors in a temperature chamber was assembled. The amplification factors of the samples were determined at voltages 38 – 42 V and temperatures from –20...
| Опубликовано в: : | Двадцатая Всероссийская конференция студенческих научно-исследовательских инкубаторов, г. Томск, 2–5 мая 2023 г. С. 159-161 |
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| Главный автор: | |
| Другие авторы: | , |
| Формат: | Статья в сборнике |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001146788 |
| Итог: | The results of the research of the gain for a series of silicon photomultipliers are presented. A model for research the characteristics of photodetectors in a temperature chamber was assembled. The amplification factors of the samples were determined at voltages 38 – 42 V and temperatures from –20 to +40 °C. The recommended operating conditions for photodetector samples were revealed. |
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| Библиография: | Библиогр.: 2 назв. |
| ISBN: | 9785936296987 |