RHEED patterns from 2x1 and 1x2 superstructures during epitaxy of Si on Si(100)
This paper analyzes the growth of Si on Si (100) substrate in a wide temperature range by reflection high-energy electron diffraction method (RHEED) and studies its mechanisms.
| Published in: | Двадцать первая Всероссийская конференция студенческих научно-исследовательских инкубаторов, Томск, 13−17 мая 2024 г. : сборник трудов С. 128 |
|---|---|
| Main Author: | |
| Other Authors: | |
| Format: | Book Chapter |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001149275 Перейти в каталог НБ ТГУ |
| Summary: | This paper analyzes the growth of Si on Si (100) substrate in a wide temperature range by reflection high-energy electron diffraction method (RHEED) and studies its mechanisms. |
|---|---|
| Bibliography: | Библиогр.: 5 назв. |
| ISBN: | 9785936297168 |