Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation

Transport of nonequilibrium charge carriers in sensors based on chromium-compensated gallium arsenide under the influence of high-intensity synchrotron radiation

An important stage in the development and design of semiconductor detectors is carrying out scientific research to study the mechanisms of current flow in semiconductor sensors when exposed to ionizing radiation of various natures. In this work, we studied the transport of charge carriers in microst...

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Библиографическая информация
Опубликовано в: :	Двадцать первая Всероссийская конференция студенческих научно-исследовательских инкубаторов, Томск, 13−17 мая 2024 г. : сборник трудов С. 129-130
Главный автор:	Trofimov, M. S.
Формат:	Статья в сборнике
Язык:	English
Предметы:	полупроводниковые детекторы арсенид галлия синхротронное излучение фототок статьи в сборниках
Online-ссылка:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001149276

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