Optical rectification in doped GaSe crystals

It was demonstrated that S- and Te-doped GaSe crystals are useful and prospective for mid-IR and THz generation by optical rectification as well as phase matched mixing of spectral components of the fs pulse (down conversion). Phase matching curves for down-conversion in the S-doped and Te-doped GaS...

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Bibliographic Details
Published in:Key engineering materials Vol. 683. P. 237-242
Other Authors: Lanskii, Grigory V., Kokh, Konstantin A., Svetlichnyi, Valerii A., Andreev, Yury M. 1946-
Format: Article
Language:English
Subjects:
Online Access:https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001159198
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245 1 0 |a Optical rectification in doped GaSe crystals  |c G. V. Lanskii, K. A. Kokh, V. A. Svetlichnyi, Y. M. Andreev 
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520 3 |a It was demonstrated that S- and Te-doped GaSe crystals are useful and prospective for mid-IR and THz generation by optical rectification as well as phase matched mixing of spectral components of the fs pulse (down conversion). Phase matching curves for down-conversion in the S-doped and Te-doped GaSe. The sample optimally doped with sulfur (2.5 mas. %) have shown better characteristics under high pump fluencies than ZnTe material used in commercial devices. 
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653 |a понижающее преобразование 
653 |a генерация ТГц 
653 |a источники среднего ИК-диапазона 
655 4 |a статьи в журналах 
700 1 |a Lanskii, Grigory V.  |9 563312 
700 1 |a Kokh, Konstantin A.  |9 89168 
700 1 |a Svetlichnyi, Valerii A.  |9 562988 
700 1 |a Andreev, Yury M.  |d 1946-  |9 564682 
773 0 |t Key engineering materials  |d 2016  |g Vol. 683. P. 237-242  |x 1013-9826 
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