Study of Ga2S3 crystals grown from melt and PbCl2 flux

Study of Ga2S3 crystals grown from melt and PbCl2 flux

Monoclinic and cubic Ga2S3 crystals were obtained by Bridgman and flux methods. For the first time optical properties are measured in the bulk samples including THz range. The transparency range 0.44- 25 mm is recorded. Ga2S3 crystal demonstrated 20 times higher light induced damage threshold compared...

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Опубликовано в: :Materials research bulletin Vol. 84. P. 462-467
Другие авторы: Kokh, Konstantin A., Huang, Zhiming, Huang, Jingguo, Gao, Yanqing, Uralbekov, Bolat, Panomarev, J., Lapin, Ivan N., Svetlichnyi, Valerii A., Lanskii, Grigory V., Andreev, Yury M. 1946-
Формат: Статья в журнале
Язык:English
Предметы:
халькогениды
оптические материалы
рост кристаллов
рентгеновская дифракция
рамановская спектроскопия
оптические свойства
фазовые равновесия
статьи в журналах
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Итог:Monoclinic and cubic Ga2S3 crystals were obtained by Bridgman and flux methods. For the first time optical properties are measured in the bulk samples including THz range. The transparency range 0.44- 25 mm is recorded. Ga2S3 crystal demonstrated 20 times higher light induced damage threshold compared to GaSe. No phonon absorption peaks are found in the THz range at wavenumbers below 100 cm^1. IR and THz optical, as well as other physical properties render Ga2S3 among the prospective materials for THz applications. @ 2016 Elsevier Ltd. All rights reserved.
Библиография:Библиогр.: 24 назв.
ISSN:0025-5408

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