Universal properties of materials with Dirac dispersion relation of low-energy excitations
The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between terminals is determined in the ballistic transport approach. The calculated responses are identical...
| Published in: | Semiconductors Vol. 49, № 12. P. 1550-1556 |
|---|---|
| Main Author: | |
| Corporate Author: | |
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000535417 Перейти в каталог НБ ТГУ |