Metal-Dielectric Interfaces in Gigascale Electronics Thermal and Electrical Stability /
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the a...
| Published in: | Springer eBooks |
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| Main Authors: | , |
| Corporate Author: | |
| Format: | eBook |
| Language: | English |
| Published: |
New York, NY :
Springer New York,
2012.
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| Series: | Springer Series in Materials Science,
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/978-1-4614-1812-2 Перейти в каталог НБ ТГУ |
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| 505 | 0 | |a Preface -- 1. Introduction -- 2. Metal-Dielectric Diffusion Processes: Fundamentals -- 3. Experimental Techniques -- 4. Al-Dielectric Interfaces -- 5. Cu-Dielectric Interfaces -- 6. Barrier Metal-Dielectric Interfaces -- 7. Self-Forming Barriers. 8. Kinetics of Ion Drift -- 9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions. | |
| 520 | |a Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design. Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces | ||
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