Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density
Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum efficiency with increasing temperature is observed. Simulation of the dependences of the quant...
| Published in: | Russian physics journal Vol. 58, № 5. P. 641-645 |
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| Corporate Author: | |
| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000535777 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1007/s11182-015-0545-2 |2 doi | |
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| 039 | 9 | |a 201803111958 |c 201802260903 |d staff |c 201611290728 |d cat202 |c 201606141014 |d cat202 |y 201606101306 |z Александр Эльверович Гилязов | |
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| 245 | 1 | 0 | |a Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density |c I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi |
| 504 | |a Библиогр.: 10 назв. | ||
| 520 | 3 | |a Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum efficiency with increasing temperature is observed. Simulation of the dependences of the quantum efficiency of LED structures on the current showed that, if account is taken of the ballistic and hopping transport of charge carriers in the active region of the structure, the calculated and experimental dependences are in good agreement. A decrease in the thickness of the active region of the structure leads to a weakening of the temperature dependence of the quantum efficiency at high current density. | |
| 653 | |a светоизлучающие диоды | ||
| 653 | |a нитрид индия-галлия | ||
| 653 | |a нитрид галлия | ||
| 653 | |a квантовая эффективность | ||
| 653 | |a квантовые ямы | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Prudaev, Ilya A. |9 99979 | |
| 700 | 1 | |a Romanov, I. S. |9 97062 | |
| 700 | 1 | |a Brudnyi, Valentin N. |9 104916 | |
| 700 | 1 | |a Kopyev, Viktor V. |9 114994 | |
| 710 | 2 | |a Томский государственный университет |b Физический факультет |b Кафедра физики полупроводников |9 83626 | |
| 773 | 0 | |t Russian physics journal |d 2015 |g Vol. 58, № 5. P. 641-645 |x 1064-8887 | |
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