Bias Temperature Instability for Devices and Circuits

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, ano...

Full description

Bibliographic Details
Published in:Springer eBooks
Corporate Author: SpringerLink (Online service)
Other Authors: Grasser, Tibor (Editor)
Format: eBook
Language:English
Published: New York, NY : Springer New York : Imprint: Springer, 2014.
Subjects:
Online Access:http://dx.doi.org/10.1007/978-1-4614-7909-3
Перейти в каталог НБ ТГУ
LEADER 03212nam a22004935i 4500
001 vtls000540911
003 RU-ToGU
005 20210922081911.0
007 cr nn 008mamaa
008 160915s2014 xxu| s |||| 0|eng d
020 |a 9781461479093  |9 978-1-4614-7909-3 
024 7 |a 10.1007/978-1-4614-7909-3  |2 doi 
035 |a to000540911 
039 9 |y 201609152135  |z Александр Эльверович Гилязов 
040 |a Springer  |c Springer  |d RU-ToGU 
050 4 |a TK7888.4 
072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
082 0 4 |a 621.3815  |2 23 
245 1 0 |a Bias Temperature Instability for Devices and Circuits  |h electronic resource  |c edited by Tibor Grasser. 
260 |a New York, NY :  |b Springer New York :  |b Imprint: Springer,  |c 2014.  |9 724206 
300 |a XI, 810 p. 601 illus., 318 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
505 0 |a Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. 
520 |a This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior. 
650 0 |a engineering.  |9 224332 
650 0 |a System safety.  |9 304167 
650 0 |a electronics.  |9 303071 
650 0 |a Systems engineering.  |9 303074 
650 1 4 |a Engineering.  |9 224332 
650 2 4 |a Circuits and Systems.  |9 303075 
650 2 4 |a Semiconductors.  |9 410520 
650 2 4 |a Electronics and Microelectronics, Instrumentation.  |9 303076 
650 2 4 |a Quality Control, Reliability, Safety and Risk.  |9 304169 
700 1 |a Grasser, Tibor.  |e editor.  |9 316085 
710 2 |a SpringerLink (Online service)  |9 143950 
773 0 |t Springer eBooks 
856 4 0 |u http://dx.doi.org/10.1007/978-1-4614-7909-3 
856 |y Перейти в каталог НБ ТГУ  |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=398673 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647) 
999 |c 398673  |d 398673