Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been found that the binding energy of electrons increases with a decrease in the thickness of a silicon spac...

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Bibliographic Details

Published in:	Journal of experimental and theoretical physics letters Vol. 101, № 11. P. 750-753
Other Authors:	Yakimov, Andrew I., Bloshkin, Aleksei A., Armbrister, V. A., Dvurechenskii, Anatolii V., Kirienko, V. V.
Format:	Article
Language:	English
Subjects:	квантовые точки кремний германий локализация электронов статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552753 Перейти в каталог НБ ТГУ