Электронная структура интерметаллидов на основе редкоземельного элемента и переходного или благородного металла
The results of ab initio study of resonant surface states genesis in the vicinity of Г point for GdRh2Si2 are presented in this work. Our electronic band structure calculations have shown that the resonant surface states are already formed in three atomic layer slab Si-Rh-Si. The states localization...
| Published in: | Перспективы развития фундаментальных наук. Т. 1 : сборник научных трудов XV Международной конференции студентов, аспирантов и молодых ученых, 24-27 апреля 2018 г. Т. 1 : Физика. С. 84-86 |
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| Main Author: | |
| Format: | Book Chapter |
| Language: | Russian |
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| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000635324 Перейти в каталог НБ ТГУ |
| Summary: | The results of ab initio study of resonant surface states genesis in the vicinity of Г point for GdRh2Si2 are presented in this work. Our electronic band structure calculations have shown that the resonant surface states are already formed in three atomic layer slab Si-Rh-Si. The states localization within three layer slab causes its resonant nature and presence of these states on Si- and Gd- termination surfaces. |
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| Bibliography: | Библиогр.: 5 назв. |
| ISBN: | 9785946217248 9785946217231 |