Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures
We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the nat...
| Published in: | Journal of magnetism and magnetic materials Vol. 459. P. 231-235 |
|---|---|
| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000652077 Перейти в каталог НБ ТГУ |
| LEADER | 02477nab a2200337 c 4500 | ||
|---|---|---|---|
| 001 | vtls000652077 | ||
| 003 | RU-ToGU | ||
| 005 | 20230319214512.0 | ||
| 007 | cr | | ||
| 008 | 190410|2018 ne s a eng dd | ||
| 024 | 7 | |a 10.1016/j.jmmm.2017.10.106 |2 doi | |
| 035 | |a to000652077 | ||
| 039 | 9 | |a 201904111758 |c 201904101712 |d VLOAD |y 201904101653 |z Александр Эльверович Гилязов | |
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures |c V. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov |
| 504 | |a Библиогр.: 24 назв. | ||
| 520 | 3 | |a We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures. | |
| 653 | |a топологические изоляторы | ||
| 653 | |a Холла спиновый эффект | ||
| 653 | |a гетероструктуры | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Shvets, I. A. |9 492247 | |
| 700 | 1 | |a Tugushev, V. V. |9 167673 | |
| 700 | 1 | |a Chulkov, Evgueni V. |9 89119 | |
| 700 | 1 | |a Menshov, V. N. |9 101643 | |
| 773 | 0 | |t Journal of magnetism and magnetic materials |d 2018 |g Vol. 459. P. 231-235 |x 0304-8853 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000652077 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=450043 | ||
| 908 | |a статья | ||
| 999 | |c 450043 |d 450043 | ||