Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures

Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures

We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the nat...

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Bibliographic Details
Published in:	Journal of magnetism and magnetic materials Vol. 459. P. 231-235
Other Authors:	Shvets, I. A., Tugushev, V. V., Chulkov, Evgueni V., Menshov, V. N.
Format:	Article
Language:	English
Subjects:	топологические изоляторы Холла спиновый эффект гетероструктуры статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000652077 Перейти в каталог НБ ТГУ

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