Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+-π-ν-n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the...
| Published in: | Technical physics letters Vol. 44, № 6. P. 465-468 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000658437 Перейти в каталог НБ ТГУ |
| Summary: | Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+-π-ν-n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I-V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels. |
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| Bibliography: | Библиогр.: 12 назв. |
| ISSN: | 1063-7850 |