Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+-π-ν-n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the...
| Published in: | Technical physics letters Vol. 44, № 6. P. 465-468 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000658437 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.1134/S106378501806007X |2 doi | |
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| 039 | 9 | |a 201906101725 |c 201906061636 |d VLOAD |y 201906061623 |z Александр Эльверович Гилязов | |
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| 245 | 1 | 0 | |a Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs |c I. A. Prudaev, M. G. Verkholetov, A. D. Koroleva, O. P. Tolbanov |
| 504 | |a Библиогр.: 12 назв. | ||
| 520 | 3 | |a Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+-π-ν-n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I-V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels. | |
| 653 | |a лавинные S-диоды | ||
| 653 | |a уравнение непрерывности | ||
| 653 | |a транспорт носителей заряда | ||
| 653 | |a перезарядка глубоких уровней | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Verkholetov, Maksim G. |9 491990 | |
| 700 | 1 | |a Koroleva, A. D. |9 496552 | |
| 700 | 1 | |a Tolbanov, Oleg P. |9 95834 | |
| 700 | 1 | |a Prudaev, Ilya A. |9 99979 | |
| 773 | 0 | |t Technical physics letters |d 2018 |g Vol. 44, № 6. P. 465-468 |x 1063-7850 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000658437 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=456777 | ||
| 908 | |a статья | ||
| 999 | |c 456777 |d 456777 | ||