Two-dimensional in-Sb compound on silicon as a quantum spin hall insulator

Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing realization of the quantum spin Hall effect. Searching for two-dimensional realistic materials that...

Full description

Bibliographic Details
Published in:Nano letters Vol. 18, № 7. P. 4338-4345
Other Authors: Eremeev, Sergey V., Bondarenko, Leonid V., Tupchaya, Alexandra Yu, Yakovlev, Alexey A., Mihalyuk, Alexey N., Chou, Jyh-Pin, Zotov, Andrey V., Saranin, Alexander A., Gruznev, Dimitry V.
Format: Article
Language:English
Subjects:
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789467
Перейти в каталог НБ ТГУ
LEADER 02744nab a2200433 c 4500
001 vtls000789467
003 RU-ToGU
005 20230319221437.0
007 cr |
008 201202|2018 xxu s a eng dd
024 7 |a 10.1021/acs.nanolett.8b01341  |2 doi 
035 |a to000789467 
039 9 |a 202012081421  |c 202012021634  |d VLOAD  |y 202012021610  |z Александр Эльверович Гилязов 
040 |a RU-ToGU  |b rus  |c RU-ToGU 
245 1 0 |a Two-dimensional in-Sb compound on silicon as a quantum spin hall insulator  |c D. V. Gruznev, S. V. Eremeev, L. V. Bondarenko [et al.] 
336 |a Текст 
337 |a электронный 
504 |a Библиогр.: 50 назв. 
520 3 |a Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing realization of the quantum spin Hall effect. Searching for two-dimensional realistic materials that are able to provide the quantum spin Hall effect and possessing the feasibility of their experimental preparation is a growing field. Here we report on the twodimensional (In, Sb)2 3 ×2 3 compound synthesized on Si(111) substrate and its comprehensive experimental and theoretical investigations based on an atomic-scale characterization by using scanning tunneling microscopy and angle-resolved photoelectron spectroscopy as well as ab initio density functional theory calculations identifying the synthesized 2D compound as a suitable system for realization of the quantum spin Hall effect without additional functionalization like chemical adsorption, applying strain, or gating. 
653 |a электронные свойства 
653 |a электронные материалы 
653 |a Холла квантовый спиновый эффект 
653 |a тонкие пленки 
655 4 |a статьи в журналах  |9 879358 
700 1 |a Eremeev, Sergey V.  |9 89116 
700 1 |a Bondarenko, Leonid V.  |9 237728 
700 1 |a Tupchaya, Alexandra Yu.  |9 237723 
700 1 |a Yakovlev, Alexey A.  |9 327038 
700 1 |a Mihalyuk, Alexey N.  |9 237722 
700 1 |a Chou, Jyh-Pin  |9 237726 
700 1 |a Zotov, Andrey V.  |9 237729 
700 1 |a Saranin, Alexander A.  |9 237730 
700 1 |a Gruznev, Dimitry V.  |9 237720 
773 0 |t Nano letters  |d 2018  |g Vol. 18, № 7. P. 4338-4345  |x 1530-6984 
852 4 |a RU-ToGU 
856 4 |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789467 
856 |y Перейти в каталог НБ ТГУ  |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=473282 
908 |a статья 
999 |c 473282  |d 473282