Unipolar semiconductor barrier structures for infrared photodetector arrays (Review)
We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to reduce the dark currents and thereby improve the threshold characteristics and ensure operation at high...
| Опубликовано в: : | Journal of communications technology and electronics Vol. 66, № 9. P. 1084-1091 |
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| Другие авторы: | , , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000924556 Перейти в каталог НБ ТГУ |