Unipolar semiconductor barrier structures for infrared photodetector arrays (Review)

Unipolar semiconductor barrier structures for infrared photodetector arrays (Review)

We analyze the current state of research in the field of creating unipolar semiconductor barrier structures based on various materials for infrared photodetector arrays, which make it possible to reduce the dark currents and thereby improve the threshold characteristics and ensure operation at high...

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Bibliographic Details
Published in:Journal of communications technology and electronics Vol. 66, № 9. P. 1084-1091
Other Authors: Burlakov, I. D., Kulchitskii, N. A., Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Gorn, Dmitriy Igorevich
Format: Article
Language:English
Subjects:
униполярная структура
барьерная структура
молекулярно-лучевая эпитаксия
инфракрасные фотодиоды
инфракрасные фотодетекторы
матрица фокальной плоскости
арсенид галлия-индия
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000924556
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