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Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
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Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb
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Brudnyi, Valentin N.
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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
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Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe
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Talipov, Niyaz Kh
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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
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Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts
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Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate
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Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
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Brudnyi, Valentin N.
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