Showing 1 - 20 results of 45 for search 'Lozovoy, Kirill A.', query time: 0.04s Refine Results
  1. 1
    Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces
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    Article
  2. 2
    Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
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    Article
  3. 3
    Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer
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    Article
  4. 4
    Influence of edge energy on modeling the growth kinetics of quantum dots
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    Article
  5. 5
    Parameters comparison between quantum dot infrared detectors of Ge/Si and HgCdTe detectors
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    Book Chapter
  6. 6
    Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
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    Article
  7. 7
    Ge/Si elongated quantum dots formation modelling with respect to the energy of edges
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    Book Chapter
  8. 8
    Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots
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    Book Chapter
  9. 9
    Performance analysis of multilayer Ge/Si photodetector with quantum dots
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    Article
  10. 10
    Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
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    Article
  11. 11
    Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
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    Article
  12. 12
    Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures
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    Article
  13. 13
    Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots
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    Book Chapter
  14. 14
    Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system
    Published in Surface science
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    Article
  15. 15
    Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy
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  16. 16
    Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation
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    Article
  17. 17
    High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system
    Published in Nanotechnology
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    Article
  18. 18
    Molecular dynamics simulations of the growth of Ge on Si
    Published in Surface science
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    Article
  19. 19
    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films
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    Book Chapter
  20. 20
    Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air
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    Book Chapter
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