Showing 1 - 20 results of 57 for search 'Nesmelov, Sergey N.', query time: 0.03s Refine Results
  1. 1
    UV photodetectors based on wide-gap AlGaN semiconductors
    Other Authors: “...Nesmelov, Sergey N....”
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    Book Chapter
  2. 2
    Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
    Other Authors: “...Nesmelov, Sergey N....”
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  3. 3
    Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1-xCdxTe in wide temperature range
    Other Authors: “...Nesmelov, Sergey N....”
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  4. 4
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode
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  5. 5
    Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers
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  6. 6
    Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4
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  7. 7
    Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe
    Other Authors: “...Nesmelov, Sergey N....”
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    Book Chapter
  8. 8
    Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
    Other Authors: “...Nesmelov, Sergey N....”
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  9. 9
    Capacitance-voltage characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe with various insulators
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  10. 10
    Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
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  11. 11
    Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K
    Other Authors: “...Nesmelov, Sergey N....”
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    Book Chapter
  12. 12
    Admittance of MIS structures based on MBE Hg1 -xCdxTe (x = 0.21-0.23) in a wide temperature range
    Other Authors: “...Nesmelov, Sergey N....”
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    Article
  13. 13
    Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation
    Other Authors: “...Nesmelov, Sergey N....”
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  14. 14
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
    Other Authors: “...Nesmelov, Sergey N....”
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  15. 15
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
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    Article
  16. 16
    Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe
    Other Authors: “...Nesmelov, Sergey N....”
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    Article
  17. 17
    Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3
    Other Authors: “...Nesmelov, Sergey N....”
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    Article
  18. 18
    Impedance characterization of organic light-emitting structures with thermally activated delayed fluorescence
    Other Authors: “...Nesmelov, Sergey N....”
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    Article
  19. 19
    Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
    Published in EPJ Web of Conferences
    Other Authors: “...Nesmelov, Sergey N....”
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  20. 20
    Electron concentration in the near-surface graded-gap layer of MBE n-Hg1-xCdxTe (x = 0.22-0.40) determined from the capacitance measurements of MIS-structures
    Other Authors: “...Nesmelov, Sergey N....”
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