Showing 1 - 20 results of 149 for search 'Voytsekhovskiy, Alexander V.', query time: 0.06s Refine Results
  1. 1
    Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
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    Article
  2. 2
    Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range
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    Article
  3. 3
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode
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    Article
  4. 4
    Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy
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    Article
  5. 5
    Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers
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    Article
  6. 6
    Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells
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  7. 7
    Analysis of the nBn-type barrier structures for infrared photodiode detectors
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    Article
  8. 8
    Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe
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    Book Chapter
  9. 9
    Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4
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    Article
  10. 10
    UV photodetectors based on wide-gap AlGaN semiconductors
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    Book Chapter
  11. 11
    Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators
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    Article
  12. 12
    Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy
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    Article
  13. 13
    Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K
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    Article
  14. 14
    Theoretical model for description of single CdHgTe quantum well photoluminescense spectra
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    Article
  15. 15
    Ion implantation in narrow-gap CdxHg1–xTe solid solutions
    Other Authors: “...Voytsekhovskiy, Alexander V....”
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  16. 16
    Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe
    Other Authors: “...Voytsekhovskiy, Alexander V....”
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    Article
  17. 17
    The modelling of gas analyzers for ecological control based on spectral methods
    Other Authors: “...Voytsekhovskiy, Alexander V....”
    Book Chapter
  18. 18
    High-sensitive two-layer photoresistors based on р-CdxHg1-HGxTe with a converted near-surface layer
    Other Authors: “...Voytsekhovskiy, Alexander V....”
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    Article
  19. 19
    Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces
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    Article
  20. 20
    Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems
    Other Authors: “...Voytsekhovskiy, Alexander V....”
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    Article
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