Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP single-photon avalanche diodes

We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating and active reset. We have shown when such solutions are ben...

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Bibliographic Details

Published in:	IEEE journal of quantum electronics Vol. 58, № 3. P. 4500111 (1-11)
Other Authors:	Losev, Anton V., Zavodilenko, Vladimir V., Koziy, Andrey A., Filyaev, Alexandr A., Khomyakova, Kristina I., Kurochkin, Yury V., Gorbatsevich, Alexander A.
Format:	Article
Language:	English
Subjects:	однофотонные детекторы мертвое время однофотонные лавинные диоды статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001001185 Перейти в каталог НБ ТГУ