Dead time duration and active reset influence on the afterpulse probability of InGaAs/InP single-photon avalanche diodes
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating and active reset. We have shown when such solutions are ben...
| Published in: | IEEE journal of quantum electronics Vol. 58, № 3. P. 4500111 (1-11) |
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| Other Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001001185 |