Equilibrium concentration of kinks on the SB steps of the Si(100) surface
The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are established. The numbers of step kinks are determined from atomic-resolution scanning tunneling micr...
| Опубликовано в: : | Journal of surface investigation: X-ray, synchrotron and neutron techniques Vol. 16, № 1. P. 140-144 |
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| Главный автор: | |
| Другие авторы: | , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001002743 Перейти в каталог НБ ТГУ |
| Итог: | The temperature and time dependences of the concentration of kinks on the S-A and S-B steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5 degrees are established. The numbers of step kinks are determined from atomic-resolution scanning tunneling microscopy images of the stepped Si(100) surface. It is shown that the temperature dependence of the number of kinks has a minimum at 650 degrees C. It is suggested that, at low temperatures, the steps are intensively smoothed (step kinks vanish), while at high temperatures, the step-destruction process (formation of a great number of step kinks) is more intensive. The step smoothing and destruction processes include a sequence of atom and dimer elementary acts. As the annealing time increases, the kink concentration decreases and takes a constant value. The equilibrium step-kink concentration is shown to be determined by the surface annealing temperature and time. |
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| Библиография: | Библиогр.: 23 назв. |
| ISSN: | 1027-4510 |