Laser-induced damage threshold of ZnGeP2 crystal for (sub)picosecond 1-μm laser pulse

Laser-induced damage threshold (LIDT) was measured for a ZnGeP2 crystal 16 exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ~0.22 J/cm2 for 17 the laser pulse widths of 0.3-3.5 ps and increased till 0.76 J/cm2 for 9.5-ps pulses. Multi-pulse 18 LIDT fluence for 0.3-ps pulses...

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Bibliographic Details

Published in:	Applied optics Vol. 62, № 1. P. 16-20
Other Authors:	Kinyaevskiy, Igor O., Danilov, P. A., Kudryashov, S. I., Pakholchuk, P. P., Ostrikov, S. A., Yudin, Nikolay N., Zinoviev, Mikhail M., Podzyvalov, Sergey N., Andreev, Yury M. 1946-
Format:	Article
Language:	English
Subjects:	дифосфид цинка-германия нелинейные кристаллы порог лазерно-индуцированного повреждения статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008755