Laser-induced damage threshold of ZnGeP2 crystal for (sub)picosecond 1-μm laser pulse
Laser-induced damage threshold (LIDT) was measured for a ZnGeP2 crystal 16 exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ~0.22 J/cm2 for 17 the laser pulse widths of 0.3-3.5 ps and increased till 0.76 J/cm2 for 9.5-ps pulses. Multi-pulse 18 LIDT fluence for 0.3-ps pulses...
| Published in: | Applied optics Vol. 62, № 1. P. 16-20 |
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| Other Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008755 Перейти в каталог НБ ТГУ |
| Summary: | Laser-induced damage threshold (LIDT) was measured for a ZnGeP2 crystal 16 exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ~0.22 J/cm2 for 17 the laser pulse widths of 0.3-3.5 ps and increased till 0.76 J/cm2 for 9.5-ps pulses. Multi-pulse 18 LIDT fluence for 0.3-ps pulses at repetition frequencies in the range of 100 Hz - 1 kHz was 19 ~0.053 J/cm2 and decreased further at higher - multi-kHz - pulse repetition frequencies. 20 Coating of the ZnGeP2 crystal surface by an anti-reflection multi-layer thin films increased 21 the multi-pulse LIDT by one order of magnitude - up to 0.62 J/cm2 (about 2 TW/cm2). The 22 significant increase in LIDT coupled with a decrease in reflection losses provides a way to 23 cardinally improve efficiency of frequency conversion of popular 1-μm ultrashort pulses into 24 mid- and far-IR ranges with a thin AR-coated ZnGeP2 crystal sample. |
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| Bibliography: | Библиогр.: 26 назв. |
| ISSN: | 1559-128X |