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231030|2022 sz s a eng d |
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|a 10.3390/nano12244449
|2 doi
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|a koha001008910
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration
|c M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov [et al.]
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|a Текст
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|a электронный
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|a The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post- growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm−2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non- radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.
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|a молекулярно-лучевая эпитаксия
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|a самоорганизующиеся квантовые точки
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|a низкотемпературный арсенид галлия
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|a статьи в журналах
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|a Petrushkov, Mikhail O.
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|a Abramkin, Demid S.
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|a Emelyanov, Eugeny A.
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1 |
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|a Putyato, Mikhail A.
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|a Komkov, Oleg S.
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1 |
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|a Firsov, Dmitrii D.
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1 |
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|a Vasev, Andrey V.
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|a Yesin, Michail Yu.
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|a Bakarov, Askhat K.
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|a Loshkarev, Ivan D.
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|a Gutakovskii, Anton K.
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|a Atuchin, Victor V.
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|a Preobrazhenskii, Valery V.
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| 773 |
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|t Nanomaterials
|d 2022
|g Vol. 12, № 24. P. 4449 (1-19)
|x 2079-4991
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| 852 |
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|a RU-ToGU
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| 856 |
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008910
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|a статья
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|d 1008910
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