Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...
| Published in: | Nanomaterials Vol. 12, № 24. P. 4449 (1-19) |
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| Other Authors: | , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008910 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.3390/nano12244449 |2 doi | |
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| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration |c M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 520 | 3 | |a The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post- growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm−2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non- radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots. | |
| 653 | |a молекулярно-лучевая эпитаксия | ||
| 653 | |a самоорганизующиеся квантовые точки | ||
| 653 | |a низкотемпературный арсенид галлия | ||
| 655 | 4 | |a статьи в журналах |9 897921 | |
| 700 | 1 | |a Petrushkov, Mikhail O. |9 897920 | |
| 700 | 1 | |a Abramkin, Demid S. |9 878565 | |
| 700 | 1 | |a Emelyanov, Eugeny A. |9 897922 | |
| 700 | 1 | |a Putyato, Mikhail A. |9 897923 | |
| 700 | 1 | |a Komkov, Oleg S. |9 897924 | |
| 700 | 1 | |a Firsov, Dmitrii D. |9 897925 | |
| 700 | 1 | |a Vasev, Andrey V. |9 897926 | |
| 700 | 1 | |a Yesin, Michail Yu. |9 496654 | |
| 700 | 1 | |a Bakarov, Askhat K. |9 897927 | |
| 700 | 1 | |a Loshkarev, Ivan D. |9 357109 | |
| 700 | 1 | |a Gutakovskii, Anton K. |9 475092 | |
| 700 | 1 | |a Atuchin, Victor V. |9 95830 | |
| 700 | 1 | |a Preobrazhenskii, Valery V. |9 475087 | |
| 773 | 0 | |t Nanomaterials |d 2022 |g Vol. 12, № 24. P. 4449 (1-19) |x 2079-4991 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008910 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1008910 | ||
| 908 | |a статья | ||
| 999 | |c 1008910 |d 1008910 | ||
| 039 | |b 100 | ||