Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...
| Опубликовано в: : | Nanomaterials Vol. 12, № 24. P. 4449 (1-19) |
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| Другие авторы: | , , , , , , , , , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008910 |