Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration

Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration

The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studi...

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Bibliographic Details
Published in:Nanomaterials Vol. 12, № 24. P. 4449 (1-19)
Other Authors: Petrushkov, Mikhail O., Abramkin, Demid S., Emelyanov, Eugeny A., Putyato, Mikhail A., Komkov, Oleg S., Firsov, Dmitrii D., Vasev, Andrey V., Yesin, Michail Yu, Bakarov, Askhat K., Loshkarev, Ivan D., Gutakovskii, Anton K., Atuchin, Victor V., Preobrazhenskii, Valery V.
Format: Article
Language:English
Subjects:
молекулярно-лучевая эпитаксия
самоорганизующиеся квантовые точки
низкотемпературный арсенид галлия
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001008910

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