MATERIALS RESEARCH FOUNDATIONS radiation effects in silicon carbide.
The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for app...
| Main Author: | |
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| Format: | eBook |
| Language: | English |
| Published: |
[Place of publication not identified]
MATERIALS RESEARCH FORUM,
2017.
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| Series: | Materials Research Foundations ;
volume 6 (2017) |
| Subjects: | |
| Online Access: | EBSCOhost Перейти в каталог НБ ТГУ |
| Summary: | The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussed. |
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| Physical Description: | 1 online resource |
| ISBN: | 1945291117 9781945291111 |