MATERIALS RESEARCH FOUNDATIONS radiation effects in silicon carbide.
The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for app...
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| Формат: | Электронная книга |
| Язык: | English |
| Публикация: |
[Place of publication not identified]
MATERIALS RESEARCH FORUM,
2017.
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| Серии: | Materials Research Foundations ;
volume 6 (2017) |
| Предметы: | |
| Online-ссылка: | EBSCOhost Перейти в каталог НБ ТГУ |