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20240520174210.0 |
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231215|2023 ne s a eng d |
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7 |
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|a 10.1016/j.mtcomm.2022.105241
|2 doi
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|a koha001016315
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films
|c N. N. Yakovlev, A. V. Almaev, V. I. Nikolaev [et al.]
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|a Текст
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|a электронный
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|a Библиогр.: 78 назв.
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|a The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2. A qualitative mechanism of gas sensitivity for the In2O3-Ga2O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2O3, κ(ε)-Ga2O3 and In2O3-Ga2O3 films were compared. The advantage of the In2O3-Ga2O3 mixed compounds films compared with Ga2O3 and In2O3 films is a low base electrical resistivity with a relatively high gas sensitivity.
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|a газовые сенсоры
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|a электрические свойства
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|a низкое сопротивление
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|a оксиды металлов
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|a пленки
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|a статьи в журналах
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|a Yakovlev, Nikita N.
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1 |
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|a Almaev, Aleksei V.
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|a Nikolaev, Vladimir I.
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|a Kushnarev, Bogdan O.
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1 |
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|a Pechnikov, Aleksei I.
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1 |
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|a Stepanov, Sergey I.
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1 |
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|a Chikiryaka, Andrei V.
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1 |
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|a Timashov, R. B.
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|a Scheglov, Mikhail P.
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|a Butenko, Pavel N.
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|a Almaev, Dmitry A.
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|a Chernikov, Evgeniy V.
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|t Materials today communications
|d 2023
|g Vol. 34. P. 105241 (1-10)
|x 2352-4928
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|a RU-ToGU
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016315
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|a статья
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|c 1016315
|d 1016315
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