Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when e...

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Bibliographic Details

Published in:	Materials today communications Vol. 34. P. 105241 (1-10)
Other Authors:	Yakovlev, Nikita N., Almaev, Aleksei V., Nikolaev, Vladimir I., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Stepanov, Sergey I., Chikiryaka, Andrei V., Timashov, R. B., Scheglov, Mikhail P., Butenko, Pavel N., Almaev, Dmitry A., Chernikov, Evgeniy V.
Format:	Article
Language:	English
Subjects:	газовые сенсоры электрические свойства низкое сопротивление оксиды металлов пленки статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016315