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20231221171059.0 |
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231215|2022 ru s a eng d |
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|a 10.21883/SC.2022.09.54139.9868
|2 doi
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|a koha001016318
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a Self-powered photo diodes based on Ga2O3/n-GaAs structures
|c V. M. Kalygina, O. S. Kiselyeva, B. O. Kushnarev [et al.]
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|a Текст
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|a электронный
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|a Библиогр.: 15 назв.
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|a The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ=254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ=254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film. Keywords: MIS-structures, capacitance-voltage characteristics, volt-siemens characteristics, photocurrent, trap density.
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|a МДП-структуры
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|a вольт-фарадные характеристики
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|a пленки оксида галлия
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| 653 |
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|a фотоэлектрические характеристики
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| 653 |
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|a фотодиоды
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4 |
|a статьи в журналах
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1 |
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|a Kalygina, Vera M.
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1 |
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|a Kiselyeva, O. S.
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1 |
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|a Kushnarev, Bogdan O.
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1 |
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|a Oleinik, Vladimir L.
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1 |
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|a Petrova, Julianna S.
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1 |
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|a Tsymbalov, Alexander V.
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| 773 |
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|t Semiconductors
|d 2022
|g Vol. 56, № 9. P. 707-711
|x 1063-7826
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| 852 |
4 |
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|a RU-ToGU
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| 856 |
4 |
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016318
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|a статья
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|c 1016318
|d 1016318
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