Self-powered photo diodes based on Ga2O3/n-GaAs structures
The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency o...
| Published in: | Semiconductors Vol. 56, № 9. P. 707-711 |
|---|---|
| Other Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016318 Перейти в каталог НБ ТГУ |
| LEADER | 02516nab a2200397 c 4500 | ||
|---|---|---|---|
| 001 | koha001016318 | ||
| 005 | 20231221171059.0 | ||
| 007 | cr | | ||
| 008 | 231215|2022 ru s a eng d | ||
| 024 | 7 | |a 10.21883/SC.2022.09.54139.9868 |2 doi | |
| 035 | |a koha001016318 | ||
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Self-powered photo diodes based on Ga2O3/n-GaAs structures |c V. M. Kalygina, O. S. Kiselyeva, B. O. Kushnarev [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 15 назв. | ||
| 520 | 3 | |a The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ=254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ=254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film. Keywords: MIS-structures, capacitance-voltage characteristics, volt-siemens characteristics, photocurrent, trap density. | |
| 653 | |a МДП-структуры | ||
| 653 | |a вольт-фарадные характеристики | ||
| 653 | |a пленки оксида галлия | ||
| 653 | |a фотоэлектрические характеристики | ||
| 653 | |a фотодиоды | ||
| 655 | 4 | |a статьи в журналах |9 917084 | |
| 700 | 1 | |a Kalygina, Vera M. |9 90194 | |
| 700 | 1 | |a Kiselyeva, O. S. |9 917085 | |
| 700 | 1 | |a Kushnarev, Bogdan O. |9 802463 | |
| 700 | 1 | |a Oleinik, Vladimir L. |9 483472 | |
| 700 | 1 | |a Petrova, Julianna S. |9 811521 | |
| 700 | 1 | |a Tsymbalov, Alexander V. |9 811520 | |
| 773 | 0 | |t Semiconductors |d 2022 |g Vol. 56, № 9. P. 707-711 |x 1063-7826 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016318 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1016318 | ||
| 908 | |a статья | ||
| 999 | |c 1016318 |d 1016318 | ||
| 039 | |b 100 | ||